| PART |
Description |
Maker |
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| SST49LF004B10 SST49LF004B SST49LF004B-33-4C-NHE SS |
512K X 8 FLASH 3V PROM, 120 ns, PDSO32
4 Mbit Firmware Hub
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
http://
Silicon Storage Technology, Inc
|
| E12TR-E1 E12PBT-E1 |
4M X 16 FLASH 3V PROM, 120 ns, PDSO48
4M X 16 FLASH 3V PROM, 120 ns, PBGA63
|
SPANSION LLC
|
| MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| AS29LV002B-120T1C AS29LV002B-120PC |
256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 120 ns, PDIP32
|
ALLIANCE SEMICONDUCTOR CORP
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M28F1001-12C313 M28F1001-12C113 M28F1001-12C312 M2 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 150 ns, CDIP32
128K X 8 FLASH 12V PROM, 150 ns, PQCC32
128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
ST Microelectronics
STMICROELECTRONICS
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| SST49LF020A-33-4C-WHE |
2 Mbit LPC Flash 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| MX29F100TTC-12 MX29F100TTA-12 |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
|
